rtp helios

In this work we investigated the activation and diffusion behavior of a 3 keV, 2E15 cm −2 Boron implant which was annealed on both, a standard Helios® V RTP system and a Helios® V Spike system with enhanced spike anneal sharpness. The two tools were matched regarding their temperature with a 10 s soak anneal process at 1050 °C. rtp virgobet